By Christina Nickolas
RF Micro Devices announced a new GaN process technology that enables system cost and energy savings in power conversion applications ranging from 1 to 50 KW. Called rGaN-HV, this process is claimed to deliver device breakdown voltages up to 900 V, high peak current capability, and ultra-fast switching times for GaN power switches and diodes.
The new technology complements the company’s GaN 1 process, which is optimized for high power RF applications and delivers high breakdown voltage over 400 V, and its GaN 2 process, which is optimized for high linearity applications and delivers high breakdown voltage over 300 V
The company plans to manufacture discrete power components for customers in its Greensboro, NC, wafer fab. It will also provide access to rGaN-HV to foundry customers for their customized power device solutions.